KTA1298 Datasheet

KTA1298

Datasheet specifications

Datasheet's name KTA1298
File size 74.156 KB
File type pdf
Number of pages 2

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KTA1298 1 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. KTA1298
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 800mA
  • Power Dissipation (Pd): 200mW
  • Transition Frequency (fT): 120MHz
  • DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@500mA,20mA
  • Package: SOT-23
  • Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.

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